Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide
Photoreduction Dependent p- and n-Type Semiconducting Field-Effect Transistor Properties in Undoped Reduced Graphene Oxide
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DOI：
10.1002/slct.201701509
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发表时间：
2017-08-22
期刊：
影响因子：
2.1
通讯作者：
Hayami, Shinya
中科院分区：
文献类型：
--
作者：
Takehira, Hiroshi;Islam, Md Saidul;Hayami, Shinya
在未掺杂的还原氧化石墨烯（rGO）中已经观察到p型和n型场效应晶体管（FET）性质。在光还原期间GO的短时间和长时间暴露导致形成相应的p型和n型rGO半导体。在未掺杂的材料中实现这种类型的双重行为是非常不寻常的。在这里，我们报告的存在下，这种行为的还原形式的氧化石墨烯（rGO）的第一次。
Both p- and n-type field effect transistors (FET) properties have been observed in undoped reduced graphene oxide (rGO). Short and long time exposure of GO during photo reduction results in the formation of respective p- and n-type rGO semiconductor. Achieving duel behavior of this type in an undoped material is exceedingly unusual. Herein we report the presence of such behavior in the reduced from of graphene oxide (rGO) for the first time.