OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE
OBSERVATION OF DISCRETE ELECTRONIC STATES IN A ZERO-DIMENSIONAL SEMICONDUCTOR NANOSTRUCTURE
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DOI：
10.1103/physrevlett.60.535
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发表时间：
1988-02-08
影响因子：
8.6
通讯作者：
WETSEL, AE
中科院分区：
文献类型：
--
作者：
REED, MA;RANDALL, JN;WETSEL, AE
研究了三维受限半导体量子阱（“量子点”）中的电子输运。在量子点共振隧穿中观察到的精细结构对应于零维系统的离散态密度。
Electronic transport through a three-dimensionally confined semiconductor quantum well (‘‘quantum dot’’) has been investigated. Fine structure observed in resonant tunneling through the quantum dot corresponds to the discrete density of states of a zero-dimensional system.