Mid-infrared HgTe colloidal quantum dot photodetectors
Mid-infrared HgTe colloidal quantum dot photodetectors
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DOI：
10.1038/nphoton.2011.142
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发表时间：
2011-08-01
期刊：
影响因子：
35
通讯作者：
Guyot-Sionnest, Philippe
中科院分区：
文献类型：
--
作者：
Keuleyan, Sean;Lhuillier, Emmanuel;Guyot-Sionnest, Philippe
目前的红外成像器件基于体材料和量子限制外延材料，并且将从更高的工作温度和更低的成本中受益。基于胶体量子点技术的成像芯片可以提供一种方便的低成本替代方案，但迄今为止，胶体量子点的光谱操作范围有限。在这封信中，我们报告胶体碲汞量子点光电探测器的室温光响应超过5 μ m，最长的带间吸收波长迄今为止报道的胶体材料。光电探测器由胶体溶液制成，然后在电极上滴铸薄膜。操作覆盖重要的大气中波长红外透明窗口之间的3和5 μ m的演示。
Today's infrared imaging devices are based on bulk and quantum-confined epitaxial materials and would benefit greatly from higher operating temperatures and lower cost. Imaging chips based on colloidal quantum dot technology could offer a convenient lower-cost alternative, but, to date, the spectral range of operation of colloidal quantum dots has been limited. In this Letter, we report colloidal HgTe quantum dot photodetectors with a room-temperature photoresponse beyond 5 mu m, the longest interband absorption wavelength reported so far for colloidal materials. The photodetectors are fabricated from colloidal solutions, which are then drop-cast as thin films on electrodes. Operation covering the important atmospheric mid-wavelength infrared transparency window between 3 and 5 mu m is demonstrated.