Fermi surfaces and p − d hybridization in the diluted magnetic semiconductor Ba 1 − x K x ( Zn 1 − y Mn y ) 2 As 2 studied by soft x-ray angle-resolved photoemission spectroscopy
Fermi surfaces and p − d hybridization in the diluted magnetic semiconductor Ba 1 − x K x ( Zn 1 − y Mn y ) 2 As 2 studied by soft x-ray angle-resolved photoemission spectroscopy
复制标题
DOI：
10.1103/physrevb.92.235120
复制
发表时间：
2015-09
影响因子：
3.7
通讯作者：
H. Suzuki;G. Zhao;K. Zhao;B. Chen;M. Horio;K. Koshiishi;J. Xu;M. Kobayashi;M. Minohara;E. Sakai;K. Horiba;H. Kumigashira;B. Gu;S. Maekawa;Y. Uemura;C. Jin;A. Fujimori
中科院分区：
文献类型：
--
作者：
H. Suzuki;G. Zhao;K. Zhao;B. Chen;M. Horio;K. Koshiishi;J. Xu;M. Kobayashi;M. Minohara;E. Sakai;K. Horiba;H. Kumigashira;B. Gu;S. Maekawa;Y. Uemura;C. Jin;A. Fujimori
The electronic structure of the new diluted magnetic semiconductor ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). Measurements with soft x rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $\mathrm{\ensuremath{\Gamma}}$ point, a hole corrugated cylinder surrounding the $\mathrm{\ensuremath{\Gamma}}$ and $Z$ points, and an electron pocket around the $Z$ point are observed, and explain the metallic transport of ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$. This is contrasted with ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$ (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo-resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$ and in the impurity band in GaMnAs.
The electronic structure of the new diluted magnetic semiconductor ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$ ($x=0.30$, $y=0.15$) in single crystal form has been investigated by angle-resolved photoemission spectroscopy (ARPES). Measurements with soft x rays clarify the host valence-band electronic structure primarily composed of the As $4p$ states. Two hole pockets around the $\mathrm{\ensuremath{\Gamma}}$ point, a hole corrugated cylinder surrounding the $\mathrm{\ensuremath{\Gamma}}$ and $Z$ points, and an electron pocket around the $Z$ point are observed, and explain the metallic transport of ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$. This is contrasted with ${\text{Ga}}_{1\ensuremath{-}x}{\text{Mn}}_{x}\text{As}$ (GaMnAs), where it is located above the As $4p$ valence-band maximum (VBM) and no Fermi surfaces have been clearly identified. Resonance soft x-ray ARPES measurements reveal a nondispersive (Kondo-resonance-like) Mn $3d$ impurity band near the Fermi level, as in the case of GaMnAs. However, the impurity band is located well below the VBM, unlike the impurity band in GaMnAs, which is located around and above the VBM. We conclude that, while the strong hybridization between the Mn $3d$ and the As $4p$ orbitals plays an important role in creating the impurity band and inducing high temperature ferromagnetism in both systems, the metallic transport may predominantly occur in the host valence band in ${\text{Ba}}_{1\ensuremath{-}x}{\text{K}}_{x}{\text{(Zn}}_{1\ensuremath{-}y}{\text{Mn}}_{y}$)${}_{2}{\text{As}}_{2}$ and in the impurity band in GaMnAs.