Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
Universality of Short-Channel Effects in Undoped-Body Silicon Nanowire MOSFETs
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DOI：
10.1109/led.2010.2052231
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发表时间：
2010-09-01
影响因子：
4.9
通讯作者：
Sleight, Jeffrey W.
中科院分区：
文献类型：
--
作者：
Bangsaruntip, Sarunya;Cohen, Guy M.;Sleight, Jeffrey W.
来自不同尺寸的未掺杂体栅全包围（GAA）硅纳米线（NW）MOSFET的实验数据证明了短沟道效应作为L-EFF/lambda的函数的普遍性，其中L-EFF是有效沟道长度，并且。是静电缩放长度。来自未掺杂体单栅极薄SOI（ETSOI）器件的数据还表明，短沟道效应的普遍性适用于任何未掺杂体全耗尽SOI MOSFET。我们的数据表明，与未掺杂的单栅ETSOI MOSFET相比，未掺杂的GAA NW MOSFET的LEFF可以缩小约2.5倍，同时保持等效的短沟道控制。
Experimental data from undoped-body gate-all-around (GAA) silicon nanowire (NW) MOSFETs with different sizes demonstrate the universality of short-channel effects as a function of L-EFF/lambda, where L-EFF is the effective channel length and. is the electrostatic scaling length. Data from undoped-body single-gate extremely thin SOI (ETSOI) devices additionally show that the universality of short-channel effects is valid for any undoped-body fully depleted SOI MOSFET. Our data indicate that LEFF of undoped GAA NW MOSFETs can be scaled down by similar to 2.5 times compared with undoped single-gate ETSOI MOSFETs while maintaining equivalent short-channel control.