Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.
Index-matched indium tin oxide electrodes for capacitive touch screen panel applications.
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用于电容式触摸屏面板应用的折射率匹配氧化铟锡电极。
DOI：
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发表时间：
2013
影响因子：
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通讯作者：
W. Cheong
中科院分区：
文献类型：
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作者：
C. Hong;Jae‐heon Shin;B. Ju;Kyung‐Hyun Kim;N. Park;Bosul Kim;W. Cheong
已经制造了用于电容式触摸屏面板的指数匹配的氧化铟锡（ITO）电极，以改善光学透射率并减小蚀刻区域与未蚀刻区域之间的反射率差（Δ R）。8.5采用磁控溅射法在ITO电极和玻璃衬底之间分别制备了49 nm Nb 2 O 5和49 nm SiO2薄膜作为折射率匹配层。在30 nm ITO电极的情况下，实现了4.3%的透光率改善和小于1%的Δ R，沿着具有90 Ω/平方的低薄层电阻。
Index-matched indium tin oxide (ITO) electrodes for capacitive touch screen panels have been fabricated to improve optical transmittance and reduce the difference of reflectance (deltaR) between the etched and un-etched regions. 8.5 nm Nb2O5 and 49 nm SiO2 thin films were deposited by magnetron sputtering as index-matching layers between an ITO electrode and a glass substrate. In case of 30 nm ITO electrode, a 4.3% improvement in the optical transmittance and a deltaR of less than 1% were achieved, along with a low sheet resistance of 90 omega/square.