The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory

The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory
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DOI:
10.1109/jproc.2010.2064150
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发表时间:
2010-12-01
影响因子:
20.6
通讯作者:
Treger, Daryl M.
Treger, Daryl M.
中科院分区:
计算机科学1区
文献类型:
--
作者:
Wolf, Stuart A.;Lu, Jiwei;Treger, Daryl M.

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本文综述了磁学在逻辑与记忆领域的最新研究进展,并介绍了纳米磁学和自旋电子学的一些新进展。纳米磁学主要研究磁相互作用,而自旋电子学主要研究利用自旋极化电流的器件。随着互补金属氧化物半导体(CMOS)时代的终结,纳米磁学可以为利用磁性量子元胞自动机(MQCA)原理进行信息处理提供一个新的范例。本文将回顾和描述这些原理,然后介绍一种新的非光刻方法,用于生产可重构的mqca阵列和/或可电配置的存储位。此外,本文将简要介绍磁阻随机存取存储器(MRAM),这是第一种主流的自旋电子非易失性随机存取存储器,并预测其后继自旋转移扭矩随机存取存储器(STT-RAM)在不久的将来可以提供真正通用的存储器,原则上可以取代大多数,如果不是全部,半导体存储器。为了完整起见,本文将描述一种基于磁阻结构(transpinnor)的全金属逻辑架构,以及一些使用磁隧道结(MTJs)的逻辑方法。
This paper is both a review of some recent developments in the utilization of magnetism for applications to logic and memory and a description of some new innovations in nanomagnetics and spintronics. Nanomagnetics is primarily based on the magnetic interactions, while spintronics is primarily concerned with devices that utilize spin polarized currents. With the end of complementary metal-oxide-semiconductor (CMOS) in sight, nanomagnetics can provide a new paradigm for information process using the principles of magnetic quantum cellular automata (MQCA). This paper will review and describe these principles and then introduce a new nonlithographic method of producing reconfigurable arrays of MQCAs and/or storage bits that can be configured electrically. Furthermore, this paper will provide a brief description of magnetoresistive random access memory (MRAM), the first mainstream spintronic nonvolatile random access memory and project how far its successor spin transfer torque random access memory (STT-RAM) can go to provide a truly universal memory that can in principle replace most, if not all, semiconductor memories in the near future. For completeness, a description of an all-metal logic architecture based on magnetoresistive structures (transpinnor) will be described as well as some approaches to logic using magnetic tunnel junctions (MTJs).