Structures and electrical conductance of the Si(111)- 3 × 3 -Ag surface with additional Ag adsorption at low temperatures
Structures and electrical conductance of the Si(111)- 3 × 3 -Ag surface with additional Ag adsorption at low temperatures
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低温下额外吸附银的 Si(111)- 3 × 3 -Ag 表面的结构和电导率
DOI：
10.1103/physrevb.55.1310
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发表时间：
1997
影响因子：
3.7
通讯作者：
S. Ino
中科院分区：
文献类型：
--
作者：
X. Tong;S. Hasegawa;S. Ino
附加Ag吸附在Si ~111上诱导表面超结构的覆盖-温度平面相图测定低温下-A33A3-Ag表面；在0.14 ML和0.18 ML时，250k以下的A213A21相和170k以下的636相完全形成。这些结构变化引起电导率的剧烈变化；A21相的电导率明显高于初始的A3和6相。银原子的表面迁移在这一现象中起着重要作用。@s0163——1829 ~ 96 !08348 - 8 #
A phase diagram in the coverage-temperature plane for surface superstructures induced by additional Ag adsorption onto the Si ~111!-A33A3-Ag surface at low temperatures is determined; a A213A21 phase below 250 K and a 636 phase below 170 K are formed completely at 0.14 and 0.18 ML, respectively. These structural transformations cause drastic changes in the electrical conductance; the A21 phase has much higher conductivity than the initial A3 and the 6 phases. The surface migration of Ag adatoms plays an important role in the phenomenon. @S0163-1829 ~96!08348-8#