Amorphous silicon p‐n junction
Amorphous silicon p‐n junction
复制标题
非晶硅p-n结
DOI：
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发表时间：
1976
期刊：
影响因子：
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通讯作者：
M. Brodsky
中科院分区：
文献类型：
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作者：
W. Spear;P. L. Comber;S. Kinmond;M. Brodsky
描述了全非晶薄膜p-n结的制备。a-Si薄膜是通过硅烷的辉光放电分解产生的，与痕量的施主或受主杂质混合。在150 - 300 K范围内研究了结的电流-电压特性。
The preparation of an all‐amorphous thin‐film p‐n junction is described. The a‐Si films were produced by the glow discharge decomposition of silane, mixed with trace amounts of donor or acceptor impurities. The current‐voltage characteristics of the junction were investigated in the range from 150 to 300 K.