Multiplexed charge-locking device for large arrays of quantum devices
Multiplexed charge-locking device for large arrays of quantum devices
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DOI：
10.1063/1.4932012
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发表时间：
2015-10-05
影响因子：
4
通讯作者：
Smith, C. G.
中科院分区：
文献类型：
--
作者：
Puddy, R. K.;Smith, L. W.;Smith, C. G.
我们提出了一种形成和控制门定义量子器件大阵列的方法。该方法使用片上多路电荷锁定系统，并有助于克服低温恒温器测量系统中可用导线数量的限制。我们在这里描述的器件架构利用多路复用器类型的方案来将电荷锁定到栅电极上。该设计允许访问和控制总数量超过可用电触点的门，并允许形成、调制和测量大型量子设备阵列。我们在n型GaAs/AlGaAs衬底上制作了这种器件，并研究了锁定在栅极上的电荷的稳定性。通过测量器件中浮栅形成的单个量子点的库仑阻塞峰，验证了概念的正确性。浮栅的漂移速度约为每小时一次库仑振荡。(C)2015 AIP出版有限责任公司。
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour. (C) 2015 AIP Publishing LLC.