Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
Coherent heteroepitaxy of Bi2Se3 on GaAs (111)B
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DOI：
10.1063/1.3532845
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发表时间：
2010-12-27
影响因子：
4
通讯作者：
Samarth, N.
中科院分区：
文献类型：
--
作者：
Richardella, A.;Zhang, D. M.;Samarth, N.
本文报道了用分子束外延技术在GaAs（111）B表面异质外延生长Bi_2Se_3单晶薄膜。我们发现，Bi 2Se 3生长高度c轴取向，与GaAs衬底的原子级尖锐的界面。通过优化生长Bi 2Se 3之前的一个非常薄的GaAs缓冲层的生长，我们展示了原子级平坦的台阶超过数百纳米的薄膜的生长。初始时间分辨克尔旋转测量预示着机会探测相干自旋动力学之间的候选拓扑绝缘体和一大类GaAs基异质结的界面。(C)2010年美国物理学会。[doi：10.1063/1.3532845]
We report the heteroepitaxy of single crystal thin films of Bi2Se3 on the (111)B surface of GaAs by molecular beam epitaxy. We find that Bi2Se3 grows highly c-axis oriented, with an atomically sharp interface with the GaAs substrate. By optimizing the growth of a very thin GaAs buffer layer before growing the Bi2Se3, we demonstrate the growth of thin films with atomically flat terraces over hundreds of nanometers. Initial time-resolved Kerr rotation measurements herald opportunities for probing coherent spin dynamics at the interface between a candidate topological insulator and a large class of GaAs-based heterostructures. (C) 2010 American Institute of Physics. [doi:10.1063/1.3532845]