Electronic defect characteristics of Ferroelectric Sr0.25Ba0.75Nb2O6 thin films
Electronic defect characteristics of Ferroelectric Sr0.25Ba0.75Nb2O6 thin films
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铁电Sr0.25Ba0.75Nb2O6薄膜的电子缺陷特性
DOI：
10.1080/00150190108016001
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发表时间：
2001
期刊：
影响因子：
0.8
通讯作者：
Y. Yang
中科院分区：
文献类型：
--
作者：
M. Ryu;Sang Hern Lee;H. Joo;Jong Pil Kim;M. Jang;Y. Yang
用射频磁控溅射法在p型(100)Si和(111)Pt衬底上成功地生长了铁电薄膜Sr0.25Ba0.75Nb2O6(SBN)。用X-射线衍射图证实了薄膜的结晶度。当栅压为6V时，从C-V曲线测得Au/SBN/Si结构的存储窗口为1.3V。
Abstract Ferroelectric Sr0.25Ba0.75Nb2O6 (SBN) thin films were successfully grown on p-type (100) Si and (111) Pt substrates by the rf magnetron sputtering method. The crystallinity of the films was confirmed using x-ray diffraction pattern. The memory window of Au/SBN/Si structure was measured 1.3 V from the C-V curve when the gate voltage was 6V.