High‐frequency and high‐current studies of metal oxide varistors
High‐frequency and high‐current studies of metal oxide varistors
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DOI：
10.1063/1.323059
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发表时间：
1976-07
影响因子：
3.2
通讯作者：
L. Levinson;H. Philipp
中科院分区：
文献类型：
--
作者：
L. Levinson;H. Philipp
描述了ZnO基陶瓷压敏电阻器的高频106 kHz × 2×109 Hz阻抗测量。我们的研究表明，在室温下，GE-MOVR压敏电阻器的ZnO晶粒电阻率ρg小于1 Ω cm。将高频测量值与高电流（J = 103 A/cm 2）数据的ρg估计值进行比较，并从压敏陶瓷微观结构的角度解释了观察到的差异。
High‐frequency, 106≲f≲2×109 Hz, impedance measurements on ZnO‐based ceramic varistors are described. Our studies indicate that the ZnO grain resistivity ρg is less than 1 Ω cm for GE‐MOVR varistors at room temperature. The high‐frequency measurements are compared with estimates of ρg from high‐current (J≳103 A/cm2) data and the difference observed is explained in terms of the varistor ceramic microstructure.