Time-delay circuit model of high-speed p-i-n photodiodes
Time-delay circuit model of high-speed p-i-n photodiodes
复制标题
高速p-i-n光电二极管的延时电路模型
DOI：
10.1109/68.992599
复制
发表时间：
2002
影响因子：
2.6
通讯作者：
Hsiu
中科院分区：
文献类型：
--
作者：
Jau‐Ji Jou;Cheng;Chien;Huang;Hsiu
本文提出了一种考虑渡越时间效应的p-i-n光电二极管等效电路模型，并借助SPICE电路模拟器对该模型进行了光学系统性能评估。在我们的模型中，没有依赖于模型的封闭形式的表达式是必要的。用该方法分析了不同i区长度的简化p-i-n光电二极管在均匀和非均匀照明下的频率响应。文中还介绍了它在眼图分析中的应用。
We have proposed an equivalent electric circuit model of p-i-n photodiode including the transit-time effect for performance evaluation of optical systems through the aid of a SPICE-like circuit simulator. No model-dependent close-form expression is necessary in our model. Its validity is shown for the analysis of frequency response in simplified p-i-n photodiodes with different lengths of i-region under uniform or nonuniform illumination. Its application to eye-diagram analysis is demonstrated also.