Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature
Effects of BCl3 addition to Cl2 gas on etching characteristics of GaN at high temperature
复制标题
Cl2气体中添加BCl3对GaN高温刻蚀特性的影响
DOI：
10.1116/1.5082345
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发表时间：
2019
影响因子：
1.4
通讯作者：
M. Hori
中科院分区：
文献类型：
--
作者：
A. Tanide;Shohei Nakamura;Akira Horikoshi;S. Takatsuji;M. Kohno;Kazuo Kinose;S. Nadahara;K. Ishikawa;M. Sekine;M. Hori
用射频产生的Cl2-BCl3混合等离子体刻蚀氮化镓薄膜，刻蚀温度为400 °C，气压为20 。在用纯Cl2等离子体刻蚀得到狗腿型轮廓的同时，通过在Cl2等离子体中加入BCl3气体，抑制了等离子体对刻蚀表面的损伤，获得了直的侧壁形状。在刻蚀表面产生的含硼腐蚀副产物影响刻蚀速率。通过控制硼和氯化合物的副产物的再沉积，特别是在衬底温度高于230 °C时，可以获得平滑的蚀刻轮廓。
Gallium nitride films were etched at 400 °C and 20 Pa with a radio-frequency-generated Cl2–BCl3 mixed plasma. While dog-legged profiles were obtained by plasma etching using pure Cl2, straight sidewall shapes were achieved through BCl3 gas addition into the Cl2 plasma by suppressing the plasma-induced damage on the etched surface. Etching by-products containing boron on the etched surface affected the etch rate. Smooth etched profiles were obtained by controlling the redeposition of by-products of boron and chlorine compounds, particularly for substrate temperatures above 230 °C.