Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures
Interband luminescence and absorption of GaNAs/GaAs single-quantum-well structures
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DOI：
10.1063/1.126498
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发表时间：
2000-05
影响因子：
4
通讯作者：
Baoquan Sun;D. Jiang;X. D. Luo;Zhi-Xue Xu;Z. Pan;Lianhe H. Li;R. Wu
中科院分区：
文献类型：
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作者：
Baoquan Sun;D. Jiang;X. D. Luo;Zhi-Xue Xu;Z. Pan;Lianhe H. Li;R. Wu
利用光致发光和吸收光谱研究了GaNAs/GaAs单量子阱中的带间电子跃迁。实验结果表明，在低温和高激发强度下，GaNAs层的主要光致发光来源于层内的跃迁。如果假定GaNAs/GaAs量子阱为II型带排列，则可以很好地拟合不同阱宽量子阱的带间跃迁能。(C)2000年美国物理学会。【S0003-6951（00）03220-4】。
We have investigated the interband electron transitions in a GaNAs/GaAs single quantum well (QW) by photoluminescence and absorption spectra. The experimental results show that the dominant photoluminescence at low temperature and high excitation intensity originates from transitions within the GaNAs layer. The interband transition energy for QWs with different well widths can be well fitted if a type-II band line up of GaNAs/GaAs QWs is assumed. (C) 2000 American Institute of Physics. [S0003-6951(00)03220-4].