SURFACE ENERGY OF GERMANIUM AND SILICON
SURFACE ENERGY OF GERMANIUM AND SILICON
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DOI:
10.1149/1.2425806
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发表时间:
1963-01-01
影响因子:
3.9
通讯作者:
JACCODINE, RJ
中科院分区:
文献类型:
--
作者:
JACCODINE, RJ
Surface energy is one of the most fundamental parameters of a solid since it depends directly on the binding forces of the material. Indeed, it is a measure of the work necessary to separate a material into two parts along a plane. Very few measurements have been made of this quantity and these by indirect means, because of difficulties of measurement and interpretation. This report deals with a direct measurement of specific surface energy of Ge and Si made by the cleavage technique. By measuring the force just necessary to move a crack" in reversible fashion" the surface energy can be obtained. The measured value for the {111} planes of Ge and Si are 1060 ergs/cm 2 and 1230 ergs/cm 2. From these measured values the energy of the planes {100} and {110) can be estimated. They are: