AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors on SiC substrates
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DOI：
10.1063/1.1290269
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发表时间：
2000-08
影响因子：
4
通讯作者：
M. Khan;X. Hu;A. Tarakji;G. Simin;J. Yang;R. Gaska;M. Shur
中科院分区：
文献类型：
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作者：
M. Khan;X. Hu;A. Tarakji;G. Simin;J. Yang;R. Gaska;M. Shur
我们报道了在绝缘4 H-SiC衬底上生长的AlGaN/GaN金属氧化物半导体异质结场效应晶体管（MOS-HFET）。我们证明了MOS-HFET的直流和微波性能是上级优于传统的AlGaN/GaN HFET，这表明高质量的SiO2/AlGaN异质界面。与类似设计的常规AlGaN/GaN HFET相比，MOS-HFET可以在高达+10V的正栅极偏压下操作，这使沟道电流加倍。栅漏电流比常规AlGaN/GaN HFET小六个数量级以上。MOS-HFET在高达300 °C的高温下工作稳定，具有出色的夹断特性。这些结果清楚地建立了使用AlGaN/GaN MOS-HFET方法用于高功率微波和开关器件的潜力。
We report on AlGaN/GaN metal–oxide–semiconductor heterostructure field-effect transistors (MOS-HFETs) grown over insulating 4H–SiC substrates. We demonstrate that the dc and microwave performance of the MOS-HFETs is superior to that of conventional AlGaN/GaN HFETs, which points to the high quality of SiO2/AlGaN heterointerface. The MOS-HFETs could operate at positive gate biases as high as +10 V that doubles the channel current as compared to conventional AlGaN/GaN HFETs of a similar design. The gate leakage current was more than six orders of magnitude smaller than that for the conventional AlGaN/GaN HFETs. The MOS-HFETs exhibited stable operation at elevated temperatures up to 300 °C with excellent pinch-off characteristics. These results clearly establish the potential of using AlGaN/GaN MOS-HFET approach for high power microwave and switching devices.