Evidence for room-temperature in-diffusion of nickel into silicon
Evidence for room-temperature in-diffusion of nickel into silicon
复制标题
镍在室温下向硅内扩散的证据
DOI：
10.1063/1.4962394
复制
发表时间：
2016
影响因子：
4
通讯作者：
J. Weber
中科院分区：
文献类型：
--
作者：
N. Yarykin;J. Weber
晶体硅中的间隙镍在室温下是快速扩散体。在这项研究中，通过在镍污染的碱性溶液中进行湿法化学蚀刻，将镍结合到硅中。通过检测电活性 NiVO 缺陷来观察镍的扩散，该缺陷是由于 Ni 被电子辐照的 Si 中的空位-氧复合物捕获而形成的。通过深能级瞬态光谱技术测量的 NiVO 浓度深度分布在 35°C 30 分钟的 Ni 掺杂样品中延伸至~15μm。这使我们能够得到该温度下镍扩散率的较低估计值，即 10−9 cm2/s。 NiVO能级电子发射的活化能和表观俘获截面分别等于371 meV和3 × 10−15 cm2。 NiVO 复合物在 300°C 时解离，重新建立 VO 中心的初始浓度。
Interstitial nickel in crystalline Si is shown to be a fast diffuser at room temperature. In this study, Ni is incorporated in Si by wet chemical etching in nickel-contaminated alkaline solutions. Nickel in-diffusion is observed by means of detecting the electrically active NiVO defect, which is formed due to Ni capture to the vacancy–oxygen complex in electron-irradiated Si. The depth profiles of the NiVO concentration measured by the deep-level transient spectroscopy technique extend to ∼15 μm in the samples doped with Ni at 35 °C for 30 min. This allows us to get a lower estimate for the nickel diffusivity at this temperature as 10−9 cm2/s. The activation energy for electron emission from the NiVO level and the apparent capture cross section are equal to 371 meV and 3 × 10−15 cm2, respectively. The NiVO complex dissociates at 300 °C reestablishing the initial concentration of the VO centers.