On the Shockley-Read-Hall Model: Generation-recombination in semiconductors
On the Shockley-Read-Hall Model: Generation-recombination in semiconductors
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DOI：
10.1137/060650751
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发表时间：
2007-01-01
影响因子：
1.9
通讯作者：
Schmeiser, Christian
中科院分区：
文献类型：
--
作者：
Goudon, Thierry;Miljanovic, Vera;Schmeiser, Christian
The Shockley-Read-Hall model for generation-recombination of electron-hole pairs in semiconductors based on a quasi-stationary approximation for electrons in a trapped state is generalized to distributed trapped states in the forbidden band and to kinetic transport models for electrons and holes. The quasi-stationary limit is rigorously justified both for the drift-diffusion and for the kinetic model.
