Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors ∗
Quantum-Mechanical Study on Surrounding-Gate Metal-Oxide-Semiconductor Field-Effect Transistors ∗
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DOI：
10.1088/0253-6102/54/4/33
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发表时间：
2010-10
影响因子：
3.1
通讯作者：
Guang-Xi Hu;Lingli Wang;Liu Ran;Ting-Ao Tang;Zhi-Jun Qiu
中科院分区：
文献类型：
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作者：
Guang-Xi Hu;Lingli Wang;Liu Ran;Ting-Ao Tang;Zhi-Jun Qiu
随着金属氧化物半导体场效应晶体管(MOSFET)的沟道长度进入纳米尺度，量子力学效应变得越来越显著。建立了围栅(SG)nMOSFET的模型。对薛定谔方程进行了解析求解。通过仿真得到的结果对部分解进行了验证。结果表明，随着硅体半径的减小、栅极电压的减小、温度的降低，电导质量较轻的电子所占的比例增加。反型层的质心被驱离硅氧化物界面朝向硅体，因此载流子从界面受到的散射较少，从而提高了SG nMOSFET的电子有效迁移率。
As the channel length of metal-oxide-semiconductor field-effect transistors (MOSFETs) scales into the nanometer regime, quantum mechanical effects are becoming more and more significant. In this work, a model for the surrounding-gate (SG) nMOSFET is developed. The Schrodinger equation is solved analytically. Some of the solutions are verified via results obtained from simulations. It is found that the percentage of the electrons with lighter conductivity mass increases as the silicon body radius decreases, or as the gate voltage reduces, or as the temperature decreases. The centroid of inversion-layer is driven away from the silicon-oxide interface towards the silicon body, therefore the carriers will suffer less scattering from the interface and the electrons effective mobility of the SG nMOSFETs will be enhanced.