Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain
Strain relaxation in transistor channels with embedded epitaxial silicon germanium source/drain
复制标题
具有嵌入式外延硅锗源极/漏极的晶体管沟道中的应变弛豫
DOI：
10.1063/1.3040323
复制
发表时间：
2008
影响因子：
4
通讯作者：
Dmitri O. Klenov
中科院分区：
文献类型：
--
作者：
J. Liu;K. Li;S. Pandey;F. Benistant;A. See;M. Zhou;L. Hsia;R. Schampers;Dmitri O. Klenov
本文报道了在凹进硅（001）的源漏区选择性生长埋置硅锗层的晶体管的沟道应变弛豫。纳米束电子衍射被用来表征器件沟道中的局部应变。我们的研究结果表明，在注入和热退火后，在器件沟道区的应变减少。
We report on the channel strain relaxation in transistors with embedded silicon germanium layer selectively grown in source and drain areas on recessed Si(001). Nanobeam electron diffraction is used to characterize the local strain in the device channel. Our results show that strain is reduced in the device channel regions after implantation and thermal anneal.