Low-temperature, bottom-up synthesis of graphene via a radical-coupling reaction.
Low-temperature, bottom-up synthesis of graphene via a radical-coupling reaction.
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DOI：
10.1021/ja4031825
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发表时间：
2013-06
影响因子：
15
通讯作者：
Lang Jiang;Tianchao Niu;Xiuqiang Lu;Huanli Dong;Wei Chen;Yunqi Liu;Wenping Hu;Daoben Zhu
中科院分区：
文献类型：
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作者：
Lang Jiang;Tianchao Niu;Xiuqiang Lu;Huanli Dong;Wei Chen;Yunqi Liu;Wenping Hu;Daoben Zhu
在这篇文章中，我们展示了一种在低温下通过温和的自由基偶联反应合成石墨烯薄膜的方法。在沉积过程中，随着六溴苯（HBB）前体的C-Br键的有效断裂，所产生的HBB自由基在220-250 °C的低温下有效地偶联以形成石墨烯膜。原位低温扫描隧道显微镜被用来提供原子尺度的调查石墨烯的生长机制，使用六溴代二苯为前体。通过原位X射线光电子能谱测量进一步证实了石墨烯生长过程中的化学结构演变。在低温下生长的石墨烯膜的电荷载流子迁移率为1000-4200 cm（2）V（-1）s（-1），如在SiO2衬底上的场效应晶体管器件配置中评估的，表明膜的高质量。
In this article, we demonstrated a method to synthesize graphene films at low temperature via a mild radical-coupling reaction. During the deposition process, with the effectively breaking of the C-Br bonds of hexabromobenzene (HBB) precursors, the generated HBB radicals couple efficiently to form graphene films at the low temperature of 220-250 °C. In situ low-temperature scanning tunneling microscopy was used to provide atomic scale investigation of the graphene growth mechanism using HBB as precursor. The chemical structure evolution during the graphene growth process was further corroborated by in situ X-ray photoelectron spectroscopy measurements. The charge carrier mobility of the graphene film grown at low temperature is at 1000-4200 cm(2) V(-1) s(-1), as evaluated in a field-effect transistor device configuration on SiO2 substrates, indicating the high quality of the films.