Epitaxial Growth of Iron and Vanadium Films Vacuum-Evaporated onto a Copper Buffer Layer
Epitaxial Growth of Iron and Vanadium Films Vacuum-Evaporated onto a Copper Buffer Layer
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铜缓冲层上真空蒸发铁和钒薄膜的外延生长
DOI：
10.1143/jjap.29.939
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发表时间：
1990
影响因子：
1.5
通讯作者：
D. Dingley
中科院分区：
文献类型：
--
作者：
Y. Ando;D. Dingley
用透射电镜观察了真空蒸发在铜（111）缓冲层上的铁和钒薄膜的外延生长。为了揭示每个薄膜的细节，离子研磨系统被有效地应用。根据两层铁薄膜的电子衍射图和莫尔条纹，讨论了铜表面铁薄膜的伪晶性。Fe/Cu和V/Cu两层金属膜的电子衍射图证实了bcc和fcc金属膜之间存在Kurdjumov-Sachs取向和Nishiyama-Wassermann取向两种典型取向关系的共存和连续分布。
Epitaxial growth of iron and vanadium films vacuum-evaporated onto a copper (111) buffer layer was examined by transmission electron microscopy. In order to reveal fine details of each film, an ion-milling system was effectively applied. The pseudomorphism of thin iron films evaporated onto copper was discussed according to the electron diffraction pattern and moiré fringes observed in two-layer films. The coexistence of two typical orientation relationships between bcc and fcc metal films, namely Kurdjumov-Sachs and Nishiyama-Wassermann orientations, and continuous distribution between them were confirmed by electron diffraction patterns for two-layer films, Fe/Cu and V/Cu.