Formation of ohmic contacts to p‐type ZnO
Formation of ohmic contacts to p‐type ZnO
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DOI：
10.1002/pssb.200304286
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发表时间：
2004-03
期刊：
影响因子：
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通讯作者：
M. Kurimoto;A. Ashrafi;M. Ebihara;K. Uesugi;H. Kumano;I. Suemune
中科院分区：
文献类型：
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作者：
M. Kurimoto;A. Ashrafi;M. Ebihara;K. Uesugi;H. Kumano;I. Suemune
研究了p型氧化锌欧姆接触的形成。以二乙基锌、去离子水蒸气和单甲基肼为原料，用金属有机分子束外延生长了p型氧化锌样品，并在650℃和700℃氧气气氛下进行了20min的热处理，以激活掺杂的氮受体。虽然通过金p接触测量的电流-电压特性不是完全欧姆特性，但在300-520℃温度范围内快速热退火2分钟后，它们表现出了良好的欧姆特性。用传输线测量法测量了材料的欧姆接触电阻率，随着温度的升高，欧姆接触电阻率减小到约1/。在5 2 0°C保温2 m in时，获得的最小接触电阻率为3.15×10−3Ωcm 2。(2014Wiley-VCH Verlag GmbH&Co.KGaA，Weinheim)
Formation of ohmic contacts to p‐type zinc oxide (ZnO) was studied. The p‐type ZnO samples were grown by metalorganic molecular‐beam epitaxy with diethylzinc, deionized water vapor and monomethylhidrazine and were annealed under oxygen gas ambient at 650 °C or 700 °C for 20 min to activate doped nitrogen acceptors. Although the current‐voltage characteristics measured through gold p‐contacts were not perfectly ohmic, they showed perfectly ohmic properties after rapid thermal annealing (RTA) in the temperature range of 300 to 520 °C for 2 min. The ohmic contact resistivity was measured with the transmission‐line measurement method and it was decreased to approximately 1/64 with increasing the RTA temperature. The minimum contact resistivity of 3.15 × 10−3 Ω cm2 was observed with RTA at 520 °C for 2 min. (© 2004 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)