Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input
Sharp Switching Characteristics of Single Electron Transistor with Discretized Charge Input
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DOI：
10.3390/app6080214
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发表时间：
2016-07
期刊：
影响因子：
--
通讯作者：
M. Takiguchi;H. Shimada;Y. Mizugaki
中科院分区：
文献类型：
--
作者：
M. Takiguchi;H. Shimada;Y. Mizugaki
对于基于单电子晶体管的低功耗模拟和数字电路应用，需要提高其开关性能。我们以前的工作分析和数值模拟表明，一个离散的电荷输入设备，其中包括一个隧道结和两个电容，提高了单电子器件的增益特性。本文报道了一种具有离散化电荷输入功能的铝基单电子晶体管的设计与制作。采用平板型和叉指型两种几何结构来调节接地电容和耦合电容。样品在有限温度下具有明显的开关输入输出特性。
For the low-power consumption analog and digital circuit applications based on a single-electron transistor, enhancement of its switching performance is required. Our previous works analytically and numerically demonstrated that a discretized charge input device, which comprised a tunnel junction and two capacitors, improved the gain characteristics of single-electron devices. We report the design and fabrication of an aluminum-based single-electron transistor having the discretized charge input function. Flat-plate and interdigital geometries were employed for adjusting capacitances of grounded and the coupling capacitors. The sample exhibited clear switching on input-output characteristics at the finite temperature.