Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAs) Grown on Si Emitters
Emission Properties from Carbon Nanotube Field Emitter Arrays (FEAs) Grown on Si Emitters
复制标题
在硅发射器上生长的碳纳米管场发射器阵列 (FEA) 的发射特性
DOI：
10.1143/jjap.40.l983
复制
发表时间：
2001
影响因子：
1.5
通讯作者：
K. Matsumoto
中科院分区：
文献类型：
--
作者：
T. Yoshimoto;T. Iwata;Ryuutaro Minesawa;K. Matsumoto
研究了超高真空条件下碳纳米管场发射体阵列（CNT FEAs）的电子发射特性。来自CNT FEAs的发射图案在荧光屏上确认。在高发射电流条件下，发射电流符合Fowler-Nordheim关系。在发射电流为0.5mA的情况下，发射电流的波动在背景压力为1010 -7 Pa时为3%或更低。
Electron emission properties of carbon nanotube field emitter arrays (CNT FEAs) having carbon nanotube emitters on the top of Si emitters were investigated under the ultrahigh-vacuum (UHV) condition. The emission pattern from the CNT FEAs was confirmed on a phosphor screen. The emission current followed the Fowler-Nordheim relationship under the high emission current condition. With the emission current of 0.5 mA, the fluctuation of the emission current was 3% or lower at the background pressure of ∼ 10-7 Pa.