Vertical Field Effect Transistor Based Graphene/Transition Metal Dichalcogenide Van Der Waals Heterostructure
Vertical Field Effect Transistor Based Graphene/Transition Metal Dichalcogenide Van Der Waals Heterostructure
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基于垂直场效应晶体管的石墨烯/过渡金属二硫化物范德华异质结构
DOI：
10.1149/06905.0357ecst
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发表时间：
2015
期刊：
影响因子：
--
通讯作者：
and T. Machida
中科院分区：
文献类型：
--
作者：
R. Moriya;T. Yamaguchi;Y. Inoue;Y. Sata;S. Morikawa;S. Masubuchi;and T. Machida
我们展示了剥离石墨烯/过渡金属二硫属化物（TMD）/金属垂直场效应晶体管（vFET）。石墨烯和TMD之间的范德华结表现出肖特基势垒。由于石墨烯的态密度较低，石墨烯费米能级的位置可以通过外部电场进行调制，从而实现石墨烯/TMD界面肖特基势垒高度的电场调制。基于这种机制，异质结构中的垂直传输表现出> 105的大电流调制，同时异质结构显示出约104 A/cm2的工作电流密度。这些结果揭示了 vFET 在电子应用中潜在的高性能。
We demonstrated exfoliated-graphene/transition metal dichalcogenide (TMD)/metal vertical field-effect transistor (vFET). The van der Waals junction between graphene and TMD exhibits Schottky barrier. Owing to the low density of state of graphene, the position of graphene’s Fermi level can be modulated by the external electric field, thus enable us electric field modulation of Schottky barrier height at graphene/TMD interface. Based on this mechanism, a vertical transport in the heterostructure exhibits large current modulation of> 105, and at the same time the heterostructure reveals operation current density of~ 104 A/cm2. These results reveal potential high performance of vFET for electronics applications.