Electronic structure of highly mismatched semiconductor alloys
Electronic structure of highly mismatched semiconductor alloys
复制标题
高度失配半导体合金的电子结构
DOI：
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发表时间：
2000
期刊：
影响因子：
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通讯作者：
W. Walukiewicz
中科院分区：
文献类型：
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作者：
W. Walukiewicz
我们考虑一类新的半导体合金，其中金属原子部分被高度电负性的原子所取代。电负性原子在宿主半导体矩阵的导带边缘附近引入局域能级。能级与扩展态的相互作用用带防交叉来描述。这种相互作用导致电子结构的大量改变，将导带分裂成两个高度非抛物的子带。该能带抗交叉模型很好地解释了最近在几种高度不匹配的合金体系上获得的实验结果，包括GaInNAs、GaNP、ZnSTe和ZnSeTe合金。
We consider a new class of semiconductor alloys in which metallic atoms are partially replaced by highly electronegative atoms. The electronegative atoms introduce localized levels close to the conduction band edge of the host semiconductor matrix. Interaction of the levels with the extended states is described in terms of a band anticrossing. The interaction leads to a massive modification of the electronic structure splitting the conduction band into two highly nonparabolic subbands. The band anticrossing model accounts very well for recent experimental results obtained on several highly mismatched alloy systems including, GaInNAs, GaNP, ZnSTe and ZnSeTe alloys.