Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
Microstructure of Polycrystalline Silicon Films Formed through Explosive Crystallization Induced by Flash Lamp Annealing
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闪光灯退火引发爆炸晶化多晶硅薄膜的微观结构
DOI：
10.1143/jjap.50.04dp01
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发表时间：
2011
影响因子：
1.5
通讯作者：
H. Matsumura
中科院分区：
文献类型：
--
作者：
K. Ohdaira;S. Ishii;N. Tomura;H. Matsumura
利用透射电子显微镜对非晶硅（a-Si）薄膜的闪光灯退火（弗拉）诱导爆炸晶化（EC）形成的多晶硅（poly-Si）薄膜的微观结构进行了研究。由于EC而周期性形成的两个特征区域显示出不同的微观结构：一个由随机取向的、尺寸约为10 nm的密集堆积的细晶粒组成，而另一个具有相对较大（>100 nm）的拉伸晶粒，可能是通过液相外延到固相成核晶粒上形成的。在闪光灯晶化多晶硅薄膜的晶格像中可以观察到晶粒周围的少量a-Si组织，这将有利于光生载流子的快速输运。
We perform transmission electron microscopy investigation of the microstructures of polycrystalline silicon (poly-Si) films formed through explosive crystallization (EC) induced by flash lamp annealing (FLA) of precursor amorphous silicon (a-Si) films. Two characteristic regions, formed periodically as a result of EC, show different microstructures: one consists of randomly oriented, densely packed fine grains of approximately 10 nm in size, whereas the other has relatively large (>100 nm), stretched grains, probably formed through liquid-phase epitaxy onto solid-phase-nucleated grains. Little a-Si tissue surrounding grains can be observed in the lattice images of flash-lamp-crystallized poly-Si films, which would be favorable for the rapid transport of photocarriers.
对催化化学气相沉积制备的前驱非晶硅薄膜进行闪光灯退火，形成少数载流子寿命超过5μs的高质量多晶硅薄膜
DOI：
--
发表时间：
2007
期刊：
Jpn. J. Appl. Phys 46
影响因子：
--
作者：
K. Ohdaira;S. Nishizaki;Y;Endo;T. Fujiwara;H. matsumura;N. Usami;and K. Nakajima
通讯作者：
and K. Nakajima