Enhanced multiferroic properties of (1 1 0)-oriented BiFeO3 film deposited on Bi3.5Nd0.5Ti3O12-buffered indium tin oxide/Si substrate
Enhanced multiferroic properties of (1 1 0)-oriented BiFeO3 film deposited on Bi3.5Nd0.5Ti3O12-buffered indium tin oxide/Si substrate
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DOI：
10.1088/0022-3727/41/22/225402
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发表时间：
2008-10
期刊：
影响因子：
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通讯作者：
Xuemei Chen;G. Hu;Jingyue Yan;X. Wang;Changhong Yang;Weibing Wu
中科院分区：
文献类型：
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作者：
Xuemei Chen;G. Hu;Jingyue Yan;X. Wang;Changhong Yang;Weibing Wu
采用金属有机物热分解法在ITO/Si衬底上制备了BiFeO 3（BFO）薄膜，并研究了Bi3.5Nd0.5Ti3O12（BNT）缓冲层对薄膜性能的影响。X射线衍射测量表明，BNT缓冲层可以有利于BFO膜中的（110）取向晶粒的生长。与直接沉积在ITO/Si衬底上的BFO薄膜相比，具有BNT缓冲层的BFO薄膜具有更高的（1 1 0）取向晶粒体积分数、更低的漏电流和更低的矫顽场，因此具有良好的矩形度和更大的极化强度（~ 70. 2 μC cm-2）。此外，与没有BNT缓冲层的多晶BFO膜的磁化强度相比，（110）取向的BFO膜的磁化强度更容易饱和。
BiFeO3 (BFO) films with and without a Bi3.5Nd0.5Ti3O12 (BNT) buffer layer were fabricated on indium tin oxide (ITO)/Si substrates using a metal organic decomposition process. X-ray diffraction measurements reveal that a BNT buffer layer can favour the growth of (1 1 0)-oriented grains in the BFO film. BFO film with a BNT buffer layer exhibits well saturated P–E hysteresis loops with good rectangularity as well as large remanent polarization (∼70.2 µC cm−2) owing to its higher volume fraction of (1 1 0)-oriented grains, lower leakage current and lower coercive field in comparison with those of the BFO film deposited directly on the ITO/Si substrate. In addition, the magnetization of the (1 1 0)-oriented BFO film is more easily saturated compared with that of the polycrystalline BFO film without a BNT buffer layer.