Significant improvements of quantum efficiency of quaternary InAlGaN UV-LEDs on GaN substrates
Significant improvements of quantum efficiency of quaternary InAlGaN UV-LEDs on GaN substrates
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GaN 衬底上四元 InAlGaN UV-LED 的量子效率显着提高
DOI：
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发表时间：
2005
期刊：
影响因子：
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通讯作者：
K. Ishibashi
中科院分区：
文献类型：
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作者：
T. Kyono;H. Hirayama;K. Akita;Takao Nakamura;K. Ishibashi
在低位错密度的独立GaN衬底上制备了基于inalgan的350 nm波段紫外发光二极管（led）。光致发光、阴极发光和原子力显微镜测量结果表明，随着生长温度的升高，InAlGaN晶体质量得到改善，并保持了In波动效应（In成分最小）。利用优化后的InAlGaN生长条件，在100ma电流注入下的输出功率和外量子效率显著提高，在353nm波长处分别达到3.9 mW和1.1%。（©2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim）
InAlGaN-based 350 nm-band ultraviolet (UV) light-emitting diodes (LEDs) were fabricated on freestanding GaN substrates with low dislocation density. Photoluminescence, cathodoluminescence, and atomic force microscopy measurements revealed that, with increasing growth temperature, the InAlGaN crystalline quality was improved and an In fluctuation effect (with minimal In composition) was maintained. Utilizing optimized InAlGaN growth conditions, the output power and the external quantum efficiency at 100 mA current injection significantly improved to 3.9 mW and 1.1% at the wavelength of 353 nm. (© 2005 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)