MBE growth of SiGe with high Ge content for optical applications
MBE growth of SiGe with high Ge content for optical applications
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DOI：
10.1016/j.apsusc.2008.02.128
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发表时间：
2008-07
影响因子：
6.7
通讯作者：
M. Oehme;J. Werner;O. Kirfel;E. Kasper
中科院分区：
文献类型：
--
作者：
M. Oehme;J. Werner;O. Kirfel;E. Kasper
分子束外延是一种在标准硅微电子学中集成光电子器件的强有力技术。讨论了高速锗探测器的分子束外延生长。Si和Ge之间必要的晶格调节通过超薄虚拟衬底来实现。具有非常高的掺杂浓度和非常尖锐的过渡接触层生长与特殊的掺杂策略。差分外延作为一种特殊的生长方法，允许在氧化物窗口中生长外延层。
The molecular beam epitaxy is a powerful technology for integrating optoelectronic devices in standard Si microelectronics. The MBE growth of high speed germanium detectors is discussed. The necessary lattice accommodation between Si and Ge is realized by an ultra thin virtual substrate. Contact layers with very high doping concentration and very sharp transitions are grown with special doping strategies. As special growth method the differential epitaxy allows the growth of epitaxial layers in oxide windows.