Facile synthesis and nanoscale related physical properties of core-shell structured CuO/ZnO nanorods on Si substrate
Facile synthesis and nanoscale related physical properties of core-shell structured CuO/ZnO nanorods on Si substrate
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Si基底上核壳结构CuO/ZnO纳米棒的简便合成及纳米级相关物理性质
DOI：
10.1016/j.apsusc.2019.144903
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发表时间：
2020-04-15
影响因子：
6.7
通讯作者：
Liu, Zhongwu
中科院分区：
文献类型：
--
作者：
Tang, Chunmei;Sun, Fei;Liu, Zhongwu
通过在CuO/ZnO纳米棒上沉积ZnO，直接在Si衬底上制备了以p型CuO为核，n型ZnO为壳的CuO/ZnO纳米棒。利用导电原子力显微镜（C-AFM）对CuO/ZnO纳米电阻的电流-电压（I-V）特性进行了原位表征，揭示了一种新颖的基于p型的自整流阻变特性，为抑制非易失性存储器应用中的寄生电流问题提供了一种有效的解决方案。这种特殊的开关特性和较好的整流特性可以通过不同电场方向下C-AFM针尖/ZnO和ZnO/CuO的非对称背靠背结构来解释，这是由于其特殊的核壳结构p-n结。与裸CuO核相比，CuO/ZnO纳米棒的光致发光强度的增加和红移归因于沉积的壳层和特殊的异质结构。这些结果表明，通过引入ZnO壳层可以成功地调节CuO NR的电学和光学性质，这对于室温下功能纳米器件的潜在应用是重要的。
Core-shell structured CuO/ZnO nanorods (NRs) consisting of monocrystalline p-type CuO core covered with the nanocrystalline n-type ZnO shell were directly fabricated on Si substrate through depositing ZnO on the asgrown CuO NRs. The in-situ current-voltage (I-V) characterization of CuO/ZnO NRs by conducive atomic force microscopy (C-AFM) revealed a novel p-type based self-rectifying resistive switching behavior, providing an effective solution to suppress sneak current issue for nonvolatile memory applications. The special switching characteristic and better rectification can be explained by the asymmetric back-to-back structure of C-AFM tip/ZnO and ZnO/CuO under different electric field directions due to the special core-shell structured p-n junction. Compared with bare CuO core, the red-shift and increased photoluminescence (PL) intensity for the CuO/ZnO NRs have been attributed to the deposited shell and special heterostructure. These results demonstrated that the electrical and optical properties of CuO NRs can be successfully tuned by introducing a ZnO shell, which is important for potential applications in functional nanodevices at room temperature.