Magnetoresistance and magnetic properties of epitaxial magnetite thin films
Magnetoresistance and magnetic properties of epitaxial magnetite thin films
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DOI：
10.1103/physrevb.56.5096
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发表时间：
1997-09-01
影响因子：
3.7
通讯作者：
Dravid, VP
中科院分区：
文献类型：
--
作者：
Gong, GQ;Gupta, A;Dravid, VP
研究了通过脉冲激光沉积在 (001) 取向 MgO 基底上生长的外延 Fe3O4 薄膜的磁输运和磁性能。磁阻 (MR) 在 Verwey 转变 (T-nu) 附近出现峰值，正如之前针对单晶的报道。此外，我们还观察到，当温度低于 100 K 时，MR 会随着温度的降低而单调增加。对于 6600 埃厚的薄膜，在 60 K、4-T 场下观察到 MR 值高达 32%。增强的低温磁流变归因于电子跳跃传输的磁场相关激活能。
The magnetotransport and magnetic properties of epitaxial Fe3O4 thin films grown on (001)-oriented MgO substrates by pulsed-laser deposition have been investigated. The magnetoresistance (MR) exhibits a peak around the Verwey transition (T-nu) as has also been reported previously for single crystals. Additionally, we have observed that the MR increases monotonically below 100 K with decreasing temperature. MR values as high as 32% have been observed for a 6600-Angstrom-thick film at 60 K under a 4-T field. The enhanced low-temperature MR is attributed to a magnetic-field-dependent activation energy for electron hopping transport.