Development of single step grinding system for large scale φ 300 Si wafer:: A total integrated fixed-abrasive solution
Development of single step grinding system for large scale φ 300 Si wafer:: A total integrated fixed-abrasive solution
复制标题
DOI：
10.1016/s0007-8506(07)62110-6
复制
发表时间：
2001-01-01
影响因子：
4.1
通讯作者：
Shimizu, J
中科院分区：
文献类型：
--
作者：
Eda, H;Zhou, L;Shimizu, J
本研究开发了一种用于Φ 300 mm硅晶片的集成制造系统，使用固定磨料代替传统的游离浆料，以提供一种完全集成的解决方案，以实现表面粗糙度R-a <1 nm（R-y < 5，类似于6 nm）和整体平坦度< 0.2 μ m/Φ 300 mm。除了节省空间外，与当前用于Φ 200 mm Si晶圆的工艺相比，该集成系统还将总能耗显著降低了70%。三大核心技术：本文介绍了复合工艺机理、超磁致伸缩材料驱动的定位/对准装置和生态友好的冷却剂循环系统。系统的性能和结果，然后介绍和讨论。
This research has developed an integrated manufacturing system for phi 300mm silicon wafer, using fixed abrasive instead of conventional free slurry, to provide a totally integrated solution for achieving the surface roughness R-a < 1nm (R-y < 5 similar to 6nm) and the global flatness < 0.2 mum/phi 300mm. In addition to the space saving, this integrated system also significantly reduces the total energy consumption by 70%, compared with the current process used for phi 200mm Si wafer. Three core technologies: the hybrid process mechanics, the GMM (giant magnetostrictive material) actuated positioning/alignment device and the ecologically friendly coolant circulation system are described in this paper. The system performance and results are then presented and discussed.