Enhancement of carrier mobility in thin Ge layer by Sn co-doping
Enhancement of carrier mobility in thin Ge layer by Sn co-doping
复制标题
Sn共掺杂增强Ge薄层中的载流子迁移率
DOI：
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发表时间：
2016
期刊：
影响因子：
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通讯作者：
W. Skorupa
中科院分区：
文献类型：
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作者：
S. Prucnal;F. Liu;Y. Berencén;L. Vines;L. Bischoff;J. Grenzer;S. Andrić;S. Tiagulskyi;K. Pyszniak;M. Turek;A. Drozdziel;M. Helm;S. Zhou;W. Skorupa
我们提出了高载流子迁移率材料的开发，优化和制造的基础上GeOI晶片共掺杂Sn和P。Ge薄膜的制备使用等离子体增强化学气相沉积，然后通过离子注入和爆炸固相外延，这是由毫秒闪光灯退火诱导。详细讨论了再结晶机制和Sn的共掺杂对n型和p型GeOI晶片中载流子分布和载流子迁移率的影响。这一发现显着有助于国家的最先进的高载流子迁移率的GeOI晶圆，因为结果是与GeOI商业晶圆制造的外延层转移或SmartCut技术。
We present the development, optimization and fabrication of high carrier mobility materials based on GeOI wafers co-doped with Sn and P. The Ge thin films were fabricated using plasma-enhanced chemical vapour deposition followed by ion implantation and explosive solid phase epitaxy, which is induced by millisecond flash lamp annealing. The influence of the recrystallization mechanism and co-doping of Sn on the carrier distribution and carrier mobility both in n-type and p-type GeOI wafers is discussed in detail. This finding significantly contributes to the state-of-the-art of high carrier mobility-GeOI wafers since the results are comparable with GeOI commercial wafers fabricated by epitaxial layer transfer or SmartCut technology.
锗中的锡空位配合物
影响因子：
3.2
作者：
Markevich V
通讯作者：
Markevich V