Low Power Parylene-Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications
Low Power Parylene-Based Memristors with a Graphene Barrier Layer for Flexible Electronics Applications
复制标题
用于柔性电子应用的具有石墨烯势垒层的低功率聚对二甲苯忆阻器
DOI：
10.1002/aelm.201800852
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发表时间：
2019-09-01
影响因子：
6.2
通讯作者：
Huang, Ru
中科院分区：
文献类型：
--
作者：
Chen, Qingyu;Lin, Min;Huang, Ru
降低编程功耗对于实现高效率柔性神经形态电子学具有重要意义。然而，由于有机柔性忆阻器的高复位电流，这对于有机柔性忆阻器仍然特别具有挑战性。在这里，报告了一种稳健的路线，以利用具有天然纳米孔的石墨烯作为基于聚对二甲苯的柔性忆阻器的阻挡层，最终赋予器件以超低复位电流（
Lowering the programing power consumption is of importance to capacitate high-efficiency flexible neuromorphic electronics. However, this remains particularly challenging for organic flexible memristor due to its high reset current. Here a robust route is reported to capitalize on graphene with native nanopores as a barrier layer for the parylene-based flexible memristors, eventually conferring the devices to be operated with ultralow reset current (