Increased efficiency of small molecule photovoltaic cells by insertion of a MoO3 hole-extracting layer

Increased efficiency of small molecule photovoltaic cells by insertion of a MoO3 hole-extracting layer
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DOI:
10.1039/b915764f
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发表时间:
2010-01
影响因子:
32.5
通讯作者:
I. Hancox;K. Chauhan;P. Sullivan;R. Hatton;Amir Moshar-;C. Mulcahy;T. Jones
I. Hancox;K. Chauhan;P. Sullivan;R. Hatton;Amir Moshar-;C. Mulcahy;T. Jones
中科院分区:
材料科学1区
文献类型:
--
作者:
I. Hancox;K. Chauhan;P. Sullivan;R. Hatton;Amir Moshar-;C. Mulcahy;T. Jones

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我们报道,在氧化铟锡(ITO)电极和ClAlPc供体层之间的界面上插入MoO3孔提取层后,氯铝酞菁(ClAlPc)/富勒烯(C60)平面异质结光伏器件的开路电压(Voc)和功率转换效率增加了约60%,并提高了器件的稳定性。在基于混合ClAlPc/C60层的异质结器件中也观察到类似的改进。我们提出器件性能的提高是由于将ITO费米能级钉住在MoO3中间层的价带上,后者与ClAlPc的最高占据分子轨道紧密排列。
We report a ∼60% increase in open circuit voltage (Voc) and power conversion efficiency in a chloroaluminium phthalocyanine (ClAlPc)/fullerene (C60) planar heterojunction photovoltaic device after insertion of a MoO3 hole-extracting layer at the interface between the indium tin oxide (ITO) electrode and the ClAlPc donor layer, with an associated improvement in device stability. A similar improvement was observed in heterojunction devices based on mixed ClAlPc/C60 layers. We propose that the improvements in device performance are due to the pinning of the ITO Fermi level to the valance band of the MoO3 interlayer, where the latter is closely aligned with the highest occupied molecular orbital of ClAlPc.