A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology
A Bias-Varied Low-Power K-band VCO in 90 nm CMOS Technology
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DOI：
10.1109/lmwc.2012.2197817
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发表时间：
2012-05
影响因子：
3
通讯作者：
Szu-Ling Liu;X. Tian;Y. Hao;A. Chin
中科院分区：
文献类型：
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作者：
Szu-Ling Liu;X. Tian;Y. Hao;A. Chin
这封信提出了一种新的偏置可变低功耗K波段压控振荡器（VCO）在一个标准的90纳米CMOS工艺。该电路具有≤3mW的低功耗和12.2%的调谐范围以及低相位噪声特性。这些性能是通过变压器反馈和可切换的有源电路块的组合来实现的，它可以控制不同频率的直流功率，并改善相位噪声。
This letter presents a novel bias-varied low-power K-band voltage controlled oscillator (VCO) in a standard 90 nm CMOS technology. This circuit exhibits low power consumption of ≤3mW and a 12.2% tuning range with low phase noise characteristic. These performances are realized by combination of the transformer-feedback and the switchable active circuit block, which can control the dc power at different frequencies and improve the phase noise.