Improved superconducting properties in graphene-doped MgB2 bulks prepared by high energy ball milling

Improved superconducting properties in graphene-doped MgB2 bulks prepared by high energy ball milling
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DOI:
10.1007/s10854-020-03418-3
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发表时间:
2020-04
期刊:
Journal of Materials Science: Materials in Electronics
影响因子:
--
通讯作者:
H. R. Liu;Z. Xie;L. Jin;F. Yang;S. N. Zhang;Q. Y. Wang;X. Xiong;J. Feng;C. Li;L. Zhou-L.
H. R. Liu;Z. Xie;L. Jin;F. Yang;S. N. Zhang;Q. Y. Wang;X. Xiong;J. Feng;C. Li;L. Zhou-L.
中科院分区:
其他
文献类型:
--
作者:
H. R. Liu;Z. Xie;L. Jin;F. Yang;S. N. Zhang;Q. Y. Wang;X. Xiong;J. Feng;C. Li;L. Zhou-L.

文献摘要

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采用高能球磨法制备了石墨烯掺杂的MgB 2块材。系统研究了高能球磨和石墨烯掺杂对MgB 2的微观结构和临界电流密度的影响。采用X射线衍射(XRD)、扫描电子显微镜(SEM)、X射线光电子能谱(XPS)和物理性能测试系统(PPMS)对样品进行了表征。球磨石墨烯掺杂样品的密度大于纯样品的密度。与研磨法制备的样品相比,高能球磨法制备的MgB 2样品的超导性能有所提高。此外,石墨烯的加入显著提高了球磨MgB 2样品的超导性能。石墨烯掺杂和适当的球磨相结合可以细化MgB 2的晶粒并改善其晶粒间的连通性。通过高能球磨2 h制备的石墨烯掺杂量为3at%的MgB 2在20 K和0 T下具有很高的临界电流密度,达到6.4 × 105 A/cm 2。
MgB2bulks with graphene doping were synthesized by high energy ball milling process. The effect of high energy ball milling and graphene doping on the microstructure and critical current density of MgB2was studied systematically. The samples were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), and physical property measurement system (PPMS), respectively. The densities of ball-milled graphene-doped samples were larger than those of pure samples. The superconducting properties of MgB2could be increased by the high energy ball milling process, in comparison with the sample prepared by grinding process. Moreover, the significant improvement of superconducting properties for ball-milled MgB2samples could be achieved with the addition of graphene. The combination of graphene doping and suitable ball milling could refine the grain and improve the inter-grain connectivity of MgB2. MgB2with 3 at% graphene doping prepared by high energy ball milling with 2 h exhibited very high critical current density of 6.4 × 105A/cm2at 20 K and 0 T.