Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
Mimicking Neurotransmitter Release in Chemical Synapses via Hysteresis Engineering in MoS2 Transistors
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DOI：
10.1021/acsnano.7b00113
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发表时间：
2017-03-01
期刊：
影响因子：
17.1
通讯作者：
Das, Saptarshi
中科院分区：
文献类型：
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作者：
Arnold, Andrew J.;Razavieh, Ali;Das, Saptarshi
化学突触中的神经递质释放是多种大脑功能的基础，如运动、学习、认知、情感、感知和意识。此外，神经递质功能不正常或释放异常与许多神经系统疾病有关，如癫痫、硬化症、精神分裂症、阿尔茨海默病和帕金森病。我们在背门MoS2场效应晶体管（FET）中利用迟滞工程来模拟化学突触中的神经递质释放动力学。所有三个基本特征，即神经递质释放的量子性，随机性和兴奋性或抑制性，在我们的实验演示中被准确地捕获。我们还模仿了一种重要的现象，称为长期增强（LTP），它构成了人类记忆的基础。最后，我们演示了如何通过在不同状态下操作MoS2场效应管来设计LTP时间。我们的发现可以为下一代智能和智能类人机器和人机界面的设计提供关键组成部分。
Neurotransmitter release in chemical synapses is fundamental to diverse brain functions such as motor action, learning, cognition, emotion, perception, and consciousness. Moreover, improper functioning or abnormal release of neurotransmitter is associated with numerous neurological disorders such as epilepsy, sclerosis, schizophrenia, Alzheimer's disease, and Parkinson's disease. We have utilized hysteresis engineering in a back-gated MoS2 field effect transistor (FET) in order to mimic such neurotransmitter release dynamics in chemical synapses. All three essential features, i.e., quantal, stochastic, and excitatory or inhibitory nature of neurotransmitter release, were accurately captured in our experimental demonstration. We also mimicked an important phenomenon called longterm potentiation (LTP), which forms the basis of human memory. Finally, we demonstrated how to engineer the LTP time by operating the MoS2 FET in different regimes. Our findings could provide a critical component toward the design of next-generation smart and intelligent human-like machines and human machine interfaces.