GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer
GaAs-based self-aligned laser incorporating InGaP opto-electronic confinement layer
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结合 InGaP 光电限制层的 GaAs 基自对准激光器
DOI：
10.1049/el:20081236
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发表时间：
2008
影响因子：
1.1
通讯作者：
Groom K
中科院分区：
文献类型：
--
作者：
Groom K
实现基于GaAs的自对准激光器的基础上一个单一的过度生长，并避免在制造过程中暴露的AlGaAs，证明。利用掺AlN的InGaP层实现了电学和光学的限制，获得了In_（0.17）Ga_（0.83）As双量子阱激光器的单横模发射。
The realisation of GaAs-based self-aligned lasers based on a single overgrowth, and avoiding exposure of AlGaAs during fabrication, is demonstrated. Ann-doped InGaP layer is utilised for both electrical and optical confinement, resulting in single lateral mode emission from an In0.17Ga0.83As double quantum well laser.