Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches
Atomristors: Memory Effect in Atomically-thin Sheets and Record RF Switches
复制标题
原子电阻：原子薄片和记录射频开关中的记忆效应
DOI：
--
复制
发表时间：
2018
期刊：
影响因子：
--
通讯作者：
D. Akinwande
中科院分区：
文献类型：
--
作者：
Ruijing Ge;Xiaohan Wu;Myungsoo Kim;P. Chen;Jianping Shi;Junho Choi;Xiaoqin Li;Yanfeng Zhang;M. Chiang;Jack C. Lee;D. Akinwande
近年来以合成的单层二硫化钼（MoS2）为有源层的非易失性电阻开关（NVRS）已被观察到，并被称为原子电阻器[1]。在本文中，我们展示了在我们所知的所有晶体二维（2D）相关NVRS器件中最快的开关速度（<15 ns）。原子电阻器的从头算模拟结果首次阐明了开关过程中特定金属离子在硫空位上的有利取代机制。这一见解与区域尺度实验研究相结合，表明了局部导电桥的性质。硫退火恢复现象进一步支持了上述机理。此外，首次证明了剥离的二硫化钼单层具有记忆效应，将材料扩展到合成膜之外。基于MoS2原子电阻器制备了最先进的非易失性射频开关，具有0.25 dB插入损耗，29 dB隔离（均为67 GHz）和70 THz截止频率，与新兴射频开关相比具有创纪录的性能。我们的开创性工作表明，记忆效应可能存在于数十或100个类似于二硫化钼的二维单层中，为理解丰富的物理和面向不同器件应用的工程研究铺平了新的科学研究道路。
Non-volatile resistive switching (NVRS) has been recently observed with synthesized monolayer molybdenum disulfide (MoS2) as the active layer and termed atomristors [1]. In this paper, we demonstrate the fastest switching speed (<15 ns) among all crystalline two-dimensional (2D) related NVRS devices to the best of our knowledge. For the first time, ab-initio simulation results of atomristors elucidate the mechanism revealing favorable substitution of specific metal ions into sulfur vacancies during switching. This insight combined with area-scaling experimental studies indicate a local conductive-bridge-like nature. The proposed mechanism is further supported by sulfur annealing recovery phenomenon. Moreover, exfoliated MoS2 monolayer is demonstrated to have memory effect for the first time, expanding the materials beyond synthesized films. State-of-the-art non-volatile RF switches based on MoS2 atomristors were prepared, featuring 0.25 dB insertion loss, 29 dB isolation (both at 67 GHz), and 70 THz cutoff frequency, a record performance compared to emerging RF switches. Our pioneering work suggests that memory effect maybe present in dozens or 100s of 2D monolayers similar to MoS2 paving the path for new scientific studies for understanding the rich physics, and engineering research towards diverse device applications.