Electrical resistivity and thermopower of liquid Ge and Si
Electrical resistivity and thermopower of liquid Ge and Si
复制标题
液态Ge和Si的电阻率和热电势
DOI：
10.1088/0953-8984/8/50/013
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发表时间：
1996
期刊：
影响因子：
--
通讯作者：
J. V. Zytveld
中科院分区：
文献类型：
--
作者：
H. Schnyders;J. V. Zytveld
测量了纯液态硅和纯液态锗的电阻率和热电势S。对于硅，使用了一种新的密封材料，即高密度石墨。这种石墨具有低的热电势（at）、高的电阻率（at），并且很少或不与Si反应，使其成为理想的密封材料。每种液体的结果显示出金属电阻率值、电阻率的小但正的温度系数和小的热电势。特别地，对于液态Si，和和，对于液态Ge，和;所有值都是针对Si和Ge的相应熔化温度。我们还报告了每种液体的电阻率的计算，使用齐曼形式主义，最近的赝势和实验结构因子。我们的实验和计算结果与其他工作进行了比较。
The electrical resistivity and thermopower S of pure liquid silicon and pure liquid germanium have been carefully measured. For silicon, a new containment material was used, namely high-density graphite. This graphite has a low thermopower ( at ) a high resistivity ( at ), and little or no reaction with Si, making it an ideal containment material. The results for each liquid show a metallic value of resistivity, a small but positive temperature coefficient of the resistivity and a small thermopower. In particular, for liquid Si, , and and, for liquid Ge, , and ; all values are for the respective melting temperatures of Si and Ge. We also report a calculation of the resistivity of each liquid, using the Ziman formalism, with a recent pseudopotential and an experimental structure factor. Both our experimental and our calculated results are compared with other work.