Solution‐Processed Gas Barriers with Glass‐Like Ultrahigh Barrier Performance

Solution‐Processed Gas Barriers with Glass‐Like Ultrahigh Barrier Performance
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DOI:
10.1002/admi.202201517
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发表时间:
2022-10
影响因子:
5.4
通讯作者:
Tatsuki Sasaki;Lin Sun;Yu Kurosawa;Tatsuhiro Takahashi;Yoshiyuki Suzuri
Tatsuki Sasaki;Lin Sun;Yu Kurosawa;Tatsuhiro Takahashi;Yoshiyuki Suzuri
中科院分区:
材料科学3区
文献类型:
--
作者:
Tatsuki Sasaki;Lin Sun;Yu Kurosawa;Tatsuhiro Takahashi;Yoshiyuki Suzuri

文献摘要

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一些电子设备,如钙钛矿太阳能电池(PSC)和有机发光二极管(OLED),非常容易受到水蒸气的影响。因此,它们需要高性能的气体屏障(水蒸气透过率[WVTR]:小于10−5 g m−2 d−1)。溶液处理的气体屏障的屏障性能不如真空处理的气体屏障;然而,它们具有诸如高资源效率、高产量、低制造成本和可印刷性等优点,这有利于可持续制造和数字化制造。高度期望同时实现溶液可加工性和防渗透性能。在本文中,本工作报告了使用全氢聚硅氮烷(PHPS)衍生的SiN(PDSN)层开发的溶液处理的气体屏障,所述SiN(PDSN)层通过真空紫外线(VUV)照射在室温下在氮气气氛中致密化。适当的PDSN厚度和辐照VUV剂量导致4.8 × 10−5 g m−2 d−1的优异WVTR(阻隔性能接近玻璃),这使其成为迄今为止记录的最佳水蒸气阻隔材料之一。阻隔性能是实现与只有990 nm的厚度和短的真空紫外线照射时间(2.4分钟每PHPS层)。这种具有快速加工性能的高性能屏障扩展了溶液加工屏障技术的可能性。
Several electronic devices, such as perovskite solar cells (PSCs) and organic light‐emitting diodes (OLEDs), are very vulnerable to water vapor. Therefore, they require an ultrahigh‐performance gas barrier (water vapor transmission rate [WVTR]: less than 10−5 g m−2 d−1). The barrier performance of solution‐processed gas barriers is inferior to that of vacuum‐processed gas barriers; however, they possess advantages such as high resource efficiency, high throughput, low fabrication cost, and printability, which facilitate sustainable manufacturing and digital fabrication. The simultaneous realization of solution processability and ultrahigh barrier performance is highly desired. Herein, this work reports solution‐processed gas barriers developed using perhydropolysilazane (PHPS)‐derived SiN (PDSN) layers densified by vacuum ultraviolet (VUV) irradiation in a nitrogen atmosphere at room temperature. The appropriate PDSN thickness and irradiated VUV dose result in an excellent WVTR of 4.8 × 10−5 g m−2 d−1 (a barrier performance close to that of glass), which makes it among the best‐performing water vapor barriers recorded to date. The barrier performance is achieved with a thickness of only 990 nm and a short VUV irradiation time (2.4 min per PHPS layer). An ultrahigh‐performance barrier with rapid processability such as this expands the possibility of solution‐processed barrier technology.