Optimum VLD makes SPIC better and cheaper

Optimum VLD makes SPIC better and cheaper
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DOI：
10.1109/icsict.2001.981433
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发表时间：
2001-10
期刊：
2001 6th International Conference on Solid-State and Integrated Circuit Technology. Proceedings (Cat. No.01EX443)
影响因子：
--
通讯作者：
Che Xing-bi;Fan Xue-feng
Che Xing-bi;Fan Xue-feng
中科院分区：
其他
文献类型：
--
作者：
Che Xing-bi;Fan Xue-feng

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表面电压维持区的新颖结构使功率（或高压）器件能够在传统 CMOS 或 BiCMOS IC 上实现，而不需要额外的工艺。这种功率器件的电气性能比BCD技术制造的功率器件要好得多。可以制造同时使用低侧和高侧的不同类型的器件。
The novel structure for surface voltage sustaining region makes power (or high-voltage) devices capable of implementation on conventional CMOS or BiCMOS ICs without demanding additional processes. The electrical performances of this kind of power devices are much better than that made by the BCD techniques. Different kinds of devices using both the low-side and high-side can be made.