Low dark current GaN avalanche photodiodes
Low dark current GaN avalanche photodiodes
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DOI：
10.1109/3.892557
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发表时间：
2000-12
影响因子：
2.5
通讯作者：
B. Yang;T. Li;K. Heng;C. Collins;S. Wang;J. Carrano;R. Dupuis;J. Campbell;M. Schurman;I. Ferguson
中科院分区：
文献类型：
--
作者：
B. Yang;T. Li;K. Heng;C. Collins;S. Wang;J. Carrano;R. Dupuis;J. Campbell;M. Schurman;I. Ferguson
我们报道了用金属有机化学气相沉积法在蓝宝石上生长GaN雪崩光电二极管的制备和表征。电流-电压特性表明增益高于23。雪崩增益发生前的偏置电压与光响应无关，雪崩增益发生在/spl sim/4 MV/cm的电场下。近雪崩击穿时，直径30-/spl mu/m器件的暗电流小于100pa。击穿温度系数为0.03 V/K，具有雪崩击穿的特征。
We report the fabrication and characterization of GaN avalanche photodiodes grown on sapphire by metalorganic chemical vapor deposition. Current-voltage characteristics indicate a gain higher than 23. The photoresponse is independent of the bias voltage prior to the onset of avalanche gain which occurs at an electric field of /spl sim/4 MV/cm. Near avalanche breakdown, the dark current of a 30-/spl mu/m diameter device is less than 100 pA. The breakdown shows a positive temperature coefficient of 0.03 V/K that is characteristic of avalanche breakdown.