Diamond-based RF power transistors: Fundamentals and applications
Diamond-based RF power transistors: Fundamentals and applications
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DOI：
10.1016/j.diamond.2006.12.046
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发表时间：
2007-04-01
影响因子：
4.1
通讯作者：
Makimoto, T.
中科院分区：
文献类型：
--
作者：
Kasu, M.;Ueda, K.;Makimoto, T.
回顾了用于高频和高功率应用的金刚石基晶体管的现状。在采用氢 (H) 表面端接金刚石的场效应晶体管 (FET) 的 A 类操作中，我们实现了 550 mA/mm 的漏极电流密度、45 GHz 和 120 GHz 的电流增益 (f(T)) 和 120 GHz 功率增益 (f(MAX)) 截止频率以及 1 GHz 时的 2.1 W/mm 输出功率密度。我们发现栅极电容可以分为耗尽层电容和绝缘体电容。关于 H 表面终端的稳定性，没有观察到没有栅极接触的 FET 的电流明显下降，但栅极偏置应力导致漏极电流略有下降，同时栅极漏电流增加。 (c) 2007 Elsevier B.V. 保留所有权利。
The present status of diamond-based transistors for high-frequency and high-power applications is reviewed. We have achieved the drain current density of 550 mA/mm, cut-off frequencies for current gain (f(T)) and power gain (f(MAX)) of 45 GHz and 120 GHz, respectively, and output-power density of 2.1 W/mm at 1 GHz in class-A operation of a field-effect transistor (FET) with hydrogen (H)-surface-terminated diamond. We have found that gate capacitance can be separated into depletion-layer capacitance and insulator capacitance. Concerning a stability of H-surface termination, no apparent decrease in the current for an FET without a gate contact was observed, but gate bias stress results in a slight decrease in the drain current and simultaneously an increase in the gate leakage current. (c) 2007 Elsevier B.V. All rights reserved.