Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes
Afterpulsing in Ge-on-Si Single-Photon Avalanche Diodes
复制标题
DOI：
10.1109/lpt.2023.3289653
复制
发表时间：
2023-09
影响因子：
2.6
通讯作者：
Xin Yi;Z. Greener;Fiona Fleming;J. Kirdoda;D. Dumas;Lisa Saalbach;Dave A. S. Muir;L. Ferre-Llin;R. Millar;Douglas J. Paul;G. Buller
中科院分区：
文献类型：
--
作者：
Xin Yi;Z. Greener;Fiona Fleming;J. Kirdoda;D. Dumas;Lisa Saalbach;Dave A. S. Muir;L. Ferre-Llin;R. Millar;Douglas J. Paul;G. Buller
在这封信中，我们研究了26和100 μ m平面几何Ge-on-Si单光子雪崩二极管（SPAD）探测器的后脉冲，采用双探测器门控方法，门宽为50 ns。在78 K和150 K温度下，Ge-on-Si SPAD的后脉冲几率分别为130 μ s和200 μ s.这些延迟时间的测量与3.5%的过度偏置应用，这对应于15%的单光子探测效率在1.31 μ m $。我们证明，减少探测器的直径也可以是一种有效的方式来限制后脉冲在这种材料系统。
In this letter, we investigate afterpulsing in 26 and $100~\mu \text{m}$ diameter planar geometry Ge-on-Si single-photon avalanche diode (SPAD) detectors, by use of the double detector gating method with a gate width of 50 ns. Ge-on-Si SPADs were found to exhibit a 1% afterpulsing probability at a delay time of $200~\mu \text{s}$ and temperature of 78 K, and $130~\mu \text{s}$ at a temperature of 150 K. These delay times were measured with an excess bias of 3.5% applied, which corresponded to a single-photon detection efficiency of 15% at $1.31~\mu \text{m}$ . We demonstrate that reducing the detector diameter can also be an effective way to restrict afterpulsing in this material system.